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Journal Articles

Atomic bonding state of silicon oxide anodized in extremely diluted hydrofluoric solution

Arai, Taiki*; Yoshigoe, Akitaka; Motohashi, Mitsuya*

Zairyo No Kagaku To Kogaku, 60(5), p.153 - 158, 2023/10

Si oxide films are currently widely used as insulating materials in electronic devices and biomaterials. The atomic bonding state of these films significantly influences the properties of each device, thus it is particularly necessary to understand and control the chemical bonding state between Si and O in the films. In this study, the Si oxide films formed by anodic oxidation on Si substrate surfaces in extremely low concentrations of HF solutions were analyzed by X-ray photoelectron spectroscopy mainly focusing on Si2p and F1s spectra. Although the HF concentration is in the order of ppm, the films contain percent order of F atoms, suggesting the formation of Si-F and Si-O-F bonds in the films. It was also found that the different depth profiles for F and O atoms was observed, indicating that the surface reaction processes seem to be different depending on each element.

Journal Articles

Roles of excess minority carrier recombination and chemisorbed O$$_{2}$$ species at SiO$$_{2}$$/Si interfaces in Si dry oxidation; Comparison between p-Si(001) and n-Si(001) surfaces

Tsuda, Yasutaka; Yoshigoe, Akitaka; Ogawa, Shuichi*; Sakamoto, Tetsuya*; Yamamoto, Yoshiki*; Yamamoto, Yukio*; Takakuwa, Yuji*

Journal of Chemical Physics, 157(23), p.234705_1 - 234705_21, 2022/12

 Times Cited Count:0 Percentile:0.01(Chemistry, Physical)

Journal Articles

Observation of chemisorbed O$$_2$$ molecule at SiO$$_2$$/Si(001) interface during Si dry oxidation

Tsuda, Yasutaka; Yoshigoe, Akitaka; Ogawa, Shuichi*; Sakamoto, Tetsuya*; Takakuwa, Yuji*

e-Journal of Surface Science and Nanotechnology (Internet), 21(1), p.30 - 39, 2022/11

Journal Articles

X-ray photoelectron spectroscopy for ${it in situ}$ observation of surface reactions under the gas atmosphere; History, applications, issues, and future prospect

Takakuwa, Yuji*; Ogawa, Shuichi*; Yoshigoe, Akitaka

Hoshako, 35(3), p.158 - 171, 2022/05

Ambient pressure X-ray photoelectron spectroscopy for in situ observation of surface reactions using high-brightness synchrotron radiation shows a rapid progress in the number of endstations since about 2005 and is applied to various practical research field for clarifying reactions at solid/gas interfaces of e.g. catalyst, solid/liquid interfaces of e.g. fuel cell, and gas/liquid interfaces of e.g. ion liquid. In this review, a history of the development of APXPS, real-time observation of the surface reactions for Si chemical vapor deposition and Si dry oxidation, issues of APXPS, and future prospects are described.

Journal Articles

Simulation study of a shield-free directional gamma-ray detector using Small-Angle Compton Scattering

Kitayama, Yoshiharu; Terasaka, Yuta; Sato, Yuki; Torii, Tatsuo

Journal of Nuclear Engineering and Radiation Science, 7(4), p.042006_1 - 042006_7, 2021/10

Journal Articles

Quantum proton entanglement on a nanocrystalline silicon surface

Matsumoto, Takahiro*; Sugimoto, Hidehiko*; Ohara, Takashi; Tokumitsu, Akio*; Tomita, Makoto*; Ikeda, Susumu*

Physical Review B, 103(24), p.245401_1 - 245401_9, 2021/06

 Times Cited Count:0 Percentile:0(Materials Science, Multidisciplinary)

Journal Articles

Determination of localized surface phonons in nanocrystalline silicon by inelastic neutron scattering spectroscopy and its application to deuterium isotope enrichment

Matsumoto, Takahiro*; Nomata, Ikumi*; Ohara, Takashi; Kanemitsu, Yoshihiko*

Physical Review Materials (Internet), 5(6), p.066003_1 - 066003_9, 2021/06

 Times Cited Count:0 Percentile:0(Materials Science, Multidisciplinary)

Journal Articles

Radon measurements with a compact, organic-scintillator-based alpha/beta spectrometer

Morishita, Yuki; Ye, Y.*; Mata, L.*; Pozzi, S. A.*; Kearfott, K. J.*

Radiation Measurements, 137, p.106428_1 - 106428_7, 2020/09

 Times Cited Count:8 Percentile:60.71(Nuclear Science & Technology)

We have developed a compact, organic-scintillator-based alpha/beta spectrometer for radon measurements and have characterized it using a unique, small radon chamber. The spectrometer is composed of a through-silicon via (TSV) silicon photomultiplier (or SiPM) and a 6 mm $$times$$ 6 mm $$times$$ 6 mm stilbene crystal cube. Analog signals from the SiPM are sent to a digitizer. The detector is housed in a light-tight box, with a stacked air filter installed in one side of the box to enable $$^{222}$$Rn gas to diffuse to the inside. We conducted one experiment with the spectrometer and an AlphaGUARD detector placed in a basement at the University of Michigan, and we conducted other experiments with both detectors placed in a small radon chamber together with $$^{226}$$Ra sources. By applying a pulse-shape-discrimination technique, we were able to separate the alpha and beta spectra simultaneously and clearly and to measure them quantitatively. We found two peaks in the measured alpha spectrum: a lower-energy peak due to $$^{218}$$Po and a higher-energy peak due to $$^{214}$$Po. We found a linear relation between the radon concentration y from AlphaGUARD and the counting rates from the stilbene-SiPM detector. The alpha/beta spectrometer is less than 10 mm thick, and we expect that it will be easy to increase the sensitivity with future device construction. Thus, this compact, organic-scintillator-based alpha/beta spectrometer shows promise for use in novel radon-detection systems.

Journal Articles

Roles of strain and carrier in silicon oxidation

Ogawa, Shuichi*; Yoshigoe, Akitaka; Tang, J.*; Sekihata, Yuki*; Takakuwa, Yuji*

Japanese Journal of Applied Physics, 59(SM), p.SM0801_1 - SM0801_42, 2020/07

 Times Cited Count:5 Percentile:33.01(Physics, Applied)

In this paper, we review the study of the unified Si oxidation reaction model mediated by point defect generation, in which O$$_{2}$$ dissociative adsorption occurs at dangling bonds of point defects (emitted Si atoms and vacancies) at the SiO$$_{2}$$/Si interface, and the point defect generation rate is given by a combination of oxidation-induced strain, thermal strain due to the difference in thermal expansion coefficient between Si and SiO$$_{2}$$, thermal excitation of Si emission rate, and heat of adsorption.

Journal Articles

Initial oxidation kinetics of Si(113)-(3$$times$$2) investigated using supersonic seeded molecular beams

Ono, Shinya*; Tanaka, Kazuma*; Kodama, Hiraku*; Tanaka, Masatoshi*; Yoshigoe, Akitaka; Teraoka, Yuden*

Surface Science, 697, p.121600_1 - 121600_6, 2020/07

 Times Cited Count:1 Percentile:6.04(Chemistry, Physical)

The initial oxidation on silicon surfaces with (113) orientation has been investigated by high-resolution photoelectron spectroscopy with synchrotron radiation. In the present study, we investigated both the Si2p state and O1s state to evaluate the oxide thickness, composition, and to assess the strain at the SiO$$_{2}$$/Si interface. In the Si2p state, the oxidized components (Si$$^{1+}$$, Si$$^{2+}$$, Si$$^{3+}$$, Si$$^{4+}$$) were analyzed. In the O1s state, a low-binding-energy component (LBC) and a high-binding-energy component (HBC) were analyzed. To investigate the non-thermal oxidation process, we utilized the supersonic seeded molecular beam (SSMB) to enhance the translational kinetic energies ($$E_{rm t}$$) of oxygen molecules. We demonstrate that the oxide quality and oxidation kinetics are largely altered by changing $$E_{rm t}$$.

Journal Articles

A Portable radioactive plume monitor using a silicon photodiode

Tamakuma, Yuki*; Yamada, Ryohei; Iwaoka, Kazuki*; Hosoda, Masahiro*; Kuroki, Tomohiro*; Mizuno, Hiroyuki*; Yamada, Koji*; Furukawa, Masahide*; Tokonami, Shinji*

Perspectives in Science (Internet), 12, p.100414_1 - 100414_4, 2019/09

In this study, a portable radioactive plume monitor using a silicon photodiode was developed for the detection of a radioactive plume (e.g. $$^{131}$$I, $$^{134}$$Cs and $$^{137}$$Cs) in an emergency situation. It was found that the background count rate was proportional to ambient dose equivalent rate and the detection limit for the monitor at 20 $$mu$$Sv h$$^{-1}$$ as an ambient dose equivalent rate was evaluated to be 187 Bq m$$^{-3}$$ using the ISO11929 method. These results suggest that the detection limit for the system can be decreased effectively by lead shielding with optimized thickness.

Journal Articles

Gamma-ray imaging system for Fukushima Daiichi Nuclear Power Plant using silicon strip detector

Kaburagi, Masaaki; Sato, Yuki; Yoshihara, Yuri*; Shimazoe, Kenji*; Takahashi, Hiroyuki*; Torii, Tatsuo

Reactor Dosimetry; 16th International Symposium on Reactor Dosimetry (ISRD-16) (ASTM STP 1608), p.405 - 414, 2018/11

 Times Cited Count:0 Percentile:0.05(Nuclear Science & Technology)

Journal Articles

Quantum twin spectra in nanocrystalline silicon

Matsumoto, Takahiro*; Ohara, Takashi; Sugimoto, Hidehiko*; Bennington, S. M.*; Ikeda, Susumu*

Physical Review Materials (Internet), 1(5), p.051601_1 - 051601_6, 2017/10

 Times Cited Count:2 Percentile:7.76(Materials Science, Multidisciplinary)

Journal Articles

Micro-orientation control of silicon polymer thin films on graphite surfaces modified by heteroatom doping

Shimoyama, Iwao; Baba, Yuji; Hirao, Norie*

Applied Surface Science, 405, p.255 - 266, 2017/05

 Times Cited Count:1 Percentile:5.94(Chemistry, Physical)

NEXAFS spectroscopy is applied to study orientation structures of polydimethylsilane (PDMS) films deposited on heteroatom-doped graphite substrates prepared by ion beam doping. The Si ${it K}$-edge NEXAFS spectra of PDMS show opposite trends of polarization dependence for non irradiated and N$$_{2}$$$$^{+}$$-irradiated substrates, and show no polarization dependence for an Ar$$^{+}$$-irradiated substrate. Based on a theoretical interpretation of the NEXAFS spectra via first-principles calculations, we clarify that PDMS films have lying, standing, and random orientations on the non irradiated, N$$_{2}$$$$^{+}$$-irradiated, and Ar$$^{+}$$-irradiated substrates, respectively. Furthermore, photoemission electron microscopy indicates that the orientation of a PDMS film can be controlled with microstructures on the order of $$mu$$m by separating irradiated and non irradiated areas on the graphite surface. These results suggest that surface modification of graphite using ion beam doping is useful for micro-orientation control of organic thin films.

Journal Articles

The Belle II SVD data readout system

Thalmeier, R.*; Tanida, Kiyoshi; 97 of others*

Nuclear Instruments and Methods in Physics Research A, 845, p.633 - 638, 2017/02

 Times Cited Count:6 Percentile:51.46(Instruments & Instrumentation)

Journal Articles

The Belle II silicon vertex detector assembly and mechanics

Adamczyk, K.*; Tanida, Kiyoshi; Belle-II SVD Collaboration*; 97 of others*

Nuclear Instruments and Methods in Physics Research A, 845, p.38 - 42, 2017/02

 Times Cited Count:0 Percentile:0.02(Instruments & Instrumentation)

Journal Articles

A Bonding study toward the quality assurance of Belle-II silicon vertex detector modules

Kang, K. H.*; Tanida, Kiyoshi; Belle-II SVD Collaboration*; 94 of others*

Nuclear Instruments and Methods in Physics Research A, 831, p.213 - 220, 2016/09

 Times Cited Count:0 Percentile:0.02(Instruments & Instrumentation)

Journal Articles

Belle II SVD ladder assembly procedure and electrical qualification

Adamczyk, K.*; Tanida, Kiyoshi; 94 of others*

Nuclear Instruments and Methods in Physics Research A, 824, p.381 - 383, 2016/07

 Times Cited Count:0 Percentile:0.02(Instruments & Instrumentation)

Journal Articles

The Silicon vertex detector of the Belle II experiment

Adamczyk, K.*; Tanida, Kiyoshi; 94 of others*

Nuclear Instruments and Methods in Physics Research A, 824, p.406 - 410, 2016/07

 Times Cited Count:6 Percentile:49.29(Instruments & Instrumentation)

Journal Articles

Belle-II VXD radiation monitoring and beam abort with sCVD diamond sensors

Adamczyk, K.*; Tanida, Kiyoshi; 94 of others*

Nuclear Instruments and Methods in Physics Research A, 824, p.480 - 482, 2016/07

 Times Cited Count:1 Percentile:11.14(Instruments & Instrumentation)

159 (Records 1-20 displayed on this page)